Fabrication and Characterization of Vanadium/Vanadium Pentoxide/Vanadium (V/V2O5/V) Tunnel Junction Diodes
نویسندگان
چکیده
منابع مشابه
Double oxidation scheme for tunnel junction fabrication
All material supplied via Aaltodoc is protected by copyright and other intellectual property rights, and duplication or sale of all or part of any of the repository collections is not permitted, except that material may be duplicated by you for your research use or educational purposes in electronic or print form. You must obtain permission for any other use. Electronic or print copies may not ...
متن کاملParallel fabrication of magnetic tunnel junction nanopillars by nanosphere lithography
We present a new method for fabricating magnetic tunnel junction nanopillars that uses polystyrene nanospheres as a lithographic template. Unlike the common approaches, which depend on electron beam lithography to sequentially fabricate each nanopillar, this method is capable of patterning a large number of nanopillars simultaneously. Both random and ordered nanosphere patterns have been explor...
متن کاملFabrication and Characterization of Narrow-Stripe Quantum Well Laser Diodes
.............................................................................................................................. ii Acknowledgements ............................................................................................................ iii Table of
متن کاملfabrication of new ion sensitive field effect transistors (isfet) based on modification of junction-fet for analysis of hydronium, potassium and hydrazinium ions
a novel and ultra low cost isfet electrode and measurement system was designed for isfet application and detection of hydronium, hydrazinium and potassium ions. also, a measuring setup containing appropriate circuits, suitable analyzer (advantech board), de noise reduction elements, cooling system and pc was used for controlling the isfet electrode and various characteristic measurements. the t...
Modeling, Fabrication and characterization oF Silicon tunnel Field-eFFect tranSiStorS
Over the last decades, the continuous down-scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) enabled faster and more complex chips while at the same time the space and power-consumption was kept under control. However, in the future, the further reduction of the power consumption per unit area will be restricted by a fundamental limit of the inverse subthreshold swing of M...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2015
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.127.1289